| 摘要 |
PURPOSE:To obtain a continuously growable semiconductor laminate of high quality, by successively forming an In-Ga-As layer, an anti-melt-back layer of In-Ga-As-P and an In-P layer on a face of a substrate. CONSTITUTION:An In-Ga-As (In0.53Ga0.47As) layer is formed on the (111)A face of an In-P (InP) substrate. An anti-melt-back layer of In-Ga-As-P (In1-xGaxAs1-yPy) is formed on the In-Ga-As layer, and an In-P (InP) layer is formed on the anti- melt-back layer. Thus, a continuously growable semiconductor laminate of high quality is obtd. |
