SEMICONDUCTOR LASER DEVICE

摘要

PURPOSE:To manufacture a multimode laser with small non-spot astigmation by a method wherein a clad layer near the end of laser beam emitting channel of a gain guide type laser is made thicker near the stripe type current supplying region and thinner distant from the region providing the clad layer with a waveguide filling the effective role of refractive guide. CONSTITUTION:Before starting epitaxial growing operation, an N type GaAs substrate 1 is preliminarily etched by mask and etching solution excluding the part directly below the stripe type current supplying region so that the part A with specified length near the end is made thicker than the remaining region i.e. forming a groove 9 with a concave section. When an N type AlxGa1-xAs clad layer 2 is epitaxially grown on such an N type GaAs substrate 1, the grown surface becomes almost flat when the clad layer 2 is completely grown. Therefore the thickness of said layer 2 is thicker at the A part near the end directly below the stripe becoming thinner at both sides. The non-spot astigmation of the gain guide type laser may be improved by means of providing the part A near the end of a laser resonator with said structure.