| 摘要 |
PURPOSE:To obtain a high selectivity for X-rays and to form a pattern of submicron or less order by drawing a pattern directly on a mask substrate by a focused ion beam method by using tantalum or tungsten as a mask material. CONSTITUTION:A P<+> type layer is formed on a silicon substrate 1, and nitride films are formed on the ends of the back surface of the substrate 1. Then, patterns are drawn on the mask substrate by a focused ion beam device with tantalum or tungsten of a mask material to form mask patterns 4. The tantalum or tungsten is drawn as an ion beam by ionizing a compound such as TaF5 or WF6. The substrate 1 is selectively etched from its back surface, and X-ray exposing mask is manufactured as thin films. |
