| 摘要 |
PURPOSE:To curtail the time required for etching by changing a value of high frequency power to be applied to for etching the native Al2O3 and the aluminum wiring film formed thereunder. CONSTITUTION:A semiconductor substrate 3 forming circuit elements and aluminum wiring films is placed on a substrate board 2 in the container 1 exhausted to vacuum condition, the etching gas is introduced into this container and the wiring film is etched by applying a high frequency voltage across the board 2 and container 1. At this time, a means 8 for detecting amount of the light of a specific wavelength generated when the aluminum oxide film formed on the wiring film is etched is provided and thereby the fluctuation of intensity of light having a specific wavelength when said aluminum oxide film is etched and then the aluminum wiring film is etched is received and detected. Thereby, a high frequency voltage value can be controlled. |
