发明名称 REMOVAL OF RESIST FILM
摘要 PURPOSE:To simplify the photo processing by irradiating a sample surface with a lamp in the container filled with the oxygen gas and by incinerating the resist film through the heat process. CONSTITUTION:The incineration processing container 11 is filled with the O2 gas supplied from the gas inflow port 10. The oxygen gas O2 pressure is a little higher than the atmospheric pressure. Meanwhile, a sample 2 is placed on a temperature holding board 13 and the sample is introduced into the incinerating processing container 11 together with the temperature holding board 13 from the right and left entrances and exit 14, 15. The surface of the sample 2 is irradiated with many infrared lamps 12. As a result, the surface is heated up to about 500 deg.C and the resist film consisting of organic material is incinerated to be ashed.
申请公布号 JPS5956730(A) 申请公布日期 1984.04.02
申请号 JP19820167135 申请日期 1982.09.24
申请人 FUJITSU KK 发明人 SUDOU ATSUSHI
分类号 H01L21/30;G03F7/42;H01L21/027;(IPC1-7):01L21/30 主分类号 H01L21/30
代理机构 代理人
主权项
地址