| 摘要 |
PURPOSE:To improve the yield and thus enable the control of a transverse mode by a method wherein an active layer, a P type closed layer, and a P type cap layer are grown by the second liquid epitaxial growth. CONSTITUTION:Three epitaxial layers 12, 9, and 10 of N, P, and N types are provided on an N type crystal substrate 11. A wafer is processed on the substrates 12, 9, and 10 to a depth of over the thickness at least to the P type layer 9 into reverse mesa stripe form by a means such as chemical etching. The active layer 15, the P type closed layer 13, and the P type cap layer 14 are grown therein by the second liquid epitaxial growth. Thereby, the mode is stable at a low threshold value, and then the expansion angle of a beam becomes small. |
