| 摘要 |
PURPOSE:To prevent deposition of dissociated substance to the internal wall of discharge tube and improve the yield rate of thin film by separating the plasma dissociation space and a deposition space for generating a thin film through a coaxial line type microwave continuous external discharge double tube and by forming a plasma energy giving region in the intermediate area of them or in the deposition space. CONSTITUTION:An external discharge tube 11 is inserted concentrically with a cylindrical resonator 1 perpendicularly provided to the wide side area of square waveguide 1'. A thin film forming substance introducing tube 12 is inserted concentrically to the internal side of the discharge tube 11. An opening end 12' of the introducing tube 12 is located at the inside of discharge tube 11 and a reaction space 13 is formed in front of it. A carrier gas such as Ar is introduced into the discharge tube 11, while a silane gas to the introducing tube 12. A microwave power is selected so that the plasma is generated only within the discharge tube 11. The plasma generated in the discharge tube 11 is mixed with the silane gas sent from the introducing tube 11 is mixed with the silane gas sent from the introducing tube in the reaction space 13. The mixed plasma diffuses in the deposition space 14 and thereby a thin film is formed on the substrate 3. |
