发明名称 ION PLATING METHOD
摘要 PURPOSE:To form a stable compd. film without heating an object to be treated to a high temp., by ionizing an evaporating material with a filament or an ionization electrode and ionizing a gas for reaction with a thermion filament and a thermion electrode. CONSTITUTION:The evaporated material 4 of a vapor source 3 is melted and evaporated and is ionized with an ionization electrode 5. On the other hand, a gas for reaction is admitted through a gas introducing port 6 into an evacuation chamber 1 to maintain the inside of said chamber below the reduced pressure. A thermion filament 9 is then heated to ionize the gas for reaction and the electrons generated with the ionization are absorbed in a thermion electrode 10. A negative voltage is impressed to an object 7 to be treated to apply coating on the object 7, whereby the compd. film free from defects such as cracking, peeling or the like is formed. The object 7 is heated to a relatively low temp. with a heater 8 or is not heated in this case.
申请公布号 JPS5956578(A) 申请公布日期 1984.04.02
申请号 JP19820168167 申请日期 1982.09.27
申请人 TANAKA KIKINZOKU KOGYO KK 发明人 SHIMAZATO TOSHIAKI
分类号 C23C14/00;C23C14/32 主分类号 C23C14/00
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