| 摘要 |
PURPOSE:To obtain the external voltage impressed electrode of a solid-state image sensor which does not have electric contact failure and conduction failure by a method wherein the sensor is formed in a structure wherein the upper electrode at a photoelectric conversion part and a lead electrode under the photoelectric conversion part are connected each other by a solder electrode. CONSTITUTION:A field oxide film 13 are formed on a P type Si substrate 1. A bonding pad 11-C and the lead electrode 12 are constituted, a contact hole is bored at a part of a photoconductor layer 9 and a transparent conductive film 10 and except an effective picture region which composes an image, and this part is filled with solder, resulting in the formation of the solder electrode 15. This solder electrode directly contacts the lead electrode in the lower part, and contacts the transparent conductive film 10 at a swell in the upper part. |
