| 摘要 |
PURPOSE:To improve the throughput of projection exposure by measuring an undulation generated in the arrangement of chips on a material to be exposed at a pre-stage, the difference of expansion and contraction in the X-Y directions and the error of the orthogonal degree of arrangement on the chips, moving an X-Y stage and adjusting the position of the pattern of an orginal picture at the next stage. CONSTITUTION:(xd, yd), (xo, yo) and (xc, yc) in the chips set up in a semiconductor wafer 14 are selected by a detection system illumination system constituting a projection exposure device and a pattern detector. Undulations in the X direction of data inputs selected are obtained by using an error compensation arithmetic circuit 16, and pitch errors in the Y direction are arithmetically operated by a correction arithmetic circuit 17. The wafer 14 is turned to the stage of a wafer 15, undulation errors in the Y direction and pitch errors in the X direction of the same chips (xb, yb), (xo, yo) and (xa, ya) are each operated arithmetically by circuits 18 and 19 in the same manner. The errors of the orthogonal degrees of these values are corrected and computed by a circuit 20, and the XY stage 1 is moved by using driving motors 3 and 4 and pattern errors at the pre-stage are corrected at the next stage. |
