| 摘要 |
The semiconductor chip film carriers are provided with a copper cladding on one side and contain a recess for semiconductor devices in the plastic carrier region. To avoid metal depositions on the side remote from the structure in such film carriers, the strip of film has to be developed from beneath while floating on the surface of a suitable developer solution. All the other steps in the method can also only be carried out on one side, and this results in an appreciable complication of the method. For the purpose of simplification, the invention envisages coating the rearside of the plastic carrier (3) with a photosensitive sheet (4), then exposing the photoresist layer side and employing a development medium which only acts selectively on the photoresist layer (1) for the purpose of development. <IMAGE> |
