| 摘要 |
PURPOSE:To enable to form a highly precise pattern by a simple process by a method wherein after a first layer resist film insensitive to ultraviolet rays is applied to semiconductor substrate having an insulating film and is heated, while a second layer resist film sensitive to ultraviolet rays is formed and is heated, and after it is exposed to ultraviolet rays, development is performed using an alkali solution. CONSTITUTION:The first layer resist film 13 added and mixed colors to the poly-P-vinyl phenol resist is applied on the insulating film of thermal oxide film 12 on the semiconductor substrate 11. Then, by heating the semiconductor substrate 11, removal of a solvent and formation of a thermal bridge are generated, and the afterward process of regulation of solubility of alkali is performed. After then, the second layer resist film 14 of phenol novolak resist is applied on the first layer resist film 13, and baking is performed. Then, ultraviolet rays 15 are exposed to the prescribed pattern part using a reducing projection exposure device, and the substrate is developed according to the spray method using the alkali solution. |
