| 摘要 |
PURPOSE:To shorten a diffusion process remarkably by selectively setting up a photosensitive Si resin material on the surface of a semiconductor substrate and introducing an impurity while using the material as a mask when the impurity is diffused selectively to the substrate. CONSTITUTION:An SiO2 thin-layer 2 is formed on an Si substrate 1, a photosensitive Si resin liquid is applied on a thin-layer 2 in predetermined thickness through a spin coating method, sections except a region 5 are exposed by using a photo-mask, the surface is developed by a developer mainly comprising normal butyl acetate, and the Si resin film 7 in the non-exposed section region 5 is removed. Photosensitive group components in the residual film 7 are volatilized through heat treatment at 400 deg.C for approximately one hr in N2 gas, and a pure Si resin layer 7' is obtained. Ions are implanted while the layer 7' is used as the mask and the ions are permeated through the thin-layer 2, and a high-concentration impurity region 6 is formed in the substrate 1 corresponding to the region 5. The unnecessary layer 7' is removed, the whole is heated at approximately 1,000 deg.C in N2 gas, and a desired diffusion region 6' is obtained. |
