| 摘要 |
PURPOSE:To form a desired pattern easily without damaging and deteriorating a resist by generating plasma by using a gas cooled previously when a radiation sensitive resist pattern is formed on the surface of a material to be etched and the pattern is obtained through plasma etching while using the resist pattern as a mask. CONSTITUTION:The resist pattern sensing radiation, such as ultraviolet rays, far ultraviolet rays, electron rays, X-rays, etc. is formed on the surface of the material to be etched, and the desired pattern is obtained through plasma etching while using the resist pattern as the mask. Tetrafluorocarbon gas containing 5% O2 previously cooled at the temperature of dry ice by methanol-dry ice is entered beforehand in a plasma treating chamber at that time. The inside of the treating chamber is evacuated up to 0.6Torr, and the material to be etched is etched. Accordingly, the degeneration of the resist is prevented while the temperature of the surface of the body to be treated is dropped. |
