发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To remove the limit of I<2>L of multistage for use by substantially equalizing or approximating the injection current values of the I<2>L formed in the respective insular regions, thereby preventing the deterioration in the speed of the laminated I<2>L. CONSTITUTION:A p type diffused layer 5a to become a common injector, a plurality of inverters opposed to the layer 5a, n<+> type collar 8 and n<+> type emitter contacting unit 9 for surrounding the inverters are formed on the surface of the insular region 2a of the upper stage. A voltage such as 0.7V is applied to the layer 2a as the insular region of upper stage. The insular region 2b of the lower stage has two inverters 6b opposed to the common injector p type layer 5b and a p type layer 6c to become a dummy inverter, and the lower epitaxial n type layer 2b is at 0V. Part of the carrier R from the layer 5b is injected from the dummy inverter, the carrier is reversely injected, and the difference of the injection currents of the upper and lower stages is moderated, thereby increasing the operating range.
申请公布号 JPS5955058(A) 申请公布日期 1984.03.29
申请号 JP19820164835 申请日期 1982.09.24
申请人 HITACHI SEISAKUSHO KK 发明人 OGURA SADAO;KANEKO KENJI
分类号 H01L27/082;H01L21/8226;H01L27/02;H03K19/091 主分类号 H01L27/082
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