| 摘要 |
PURPOSE:To reduce the number of process, and to enable to form an electrode with a high melting point metal at lift-off technique by using photosensitive polyimide. CONSTITUTION:Althrough polyimide is etched by hydrazine, but photosensitive polyimide is not etched when it is thermally hardened. The property thereof is utilized, and a polyimide film 25 is etched using hydrazine and making a photosensitive polyimide film 26 as the mask. Then a metal is evaporated to the whole surface to form metal films 28a, 28b. At evaporation of the metal films, a gap 27 remains as it is because of existence of an edge part 26a, and the metal film 28a formed at the position of an electrode window 24 and the metal film 28b formed on the photosensitive polyimide film 26 are discontinuous. Finally, when the polyimide film 25 is removed according to plasma etching using oxygen, the photosensitive polyimide film 26 and the metal film 28b positioning thereon are also removed. |
