| 摘要 |
PURPOSE:To improve the degree of integration, and to cut a semiconductor substrate at a center positively by providing a fuse on the substrate, fitting metallic electrodes at both ends through buffer metals and thinning the effective thickness of the fuse at a central section. CONSTITUTION:The metallic electrodes 1 are attached onto the fuse 2 through the buffer metals 4, an oxide film 5 is formed at 200-500 deg.C, and the metals 4 are removed properly through etching. Since the effective thickness of the fuse 2 is reduced in the lower section of the oxide film 5 and contact sections among the metals and the fuse are separated sufficiently from a thickness reducing section at that time, a grow-back is difficult to be generated, and the fuse of high reliability is obtained. Electrical characteristics, such as cutting currents, resistance, etc. can be controlled by the conditions of oxidation of the fuse 2 and the additional etching conditions of the buffer metals 4. |
