| 摘要 |
PURPOSE:To generate internal defects of high density in an N type Si substrate, to prevent the generation of defects in a grown layer and to obtain the semiconductor device, in which leakage currents are little and dielectric resistance does not lower, by specifying the relationship of the oxygen concentration, boron concentration and N type impurity concentration of the substrate when an N type layer is grown on the substrate in an epitaxial manner. CONSTITUTION:When preparing a P-N junction diode, the N type Si substrate 5 is used as a substrate, and the relationship of concentration of each impurity made contain in the substrate is prescribed as follows. That is, the relationship of D>B>=Oi>=14X10<17>/cm<2> is sustained when oxygen concentration is Oi, boron concentration B and N type impurity concentration D. The N type layer 6 is grown on the substrate 5 in an epitaxial manner, a P type region 7 is diffused and formed to the layer 6, and the diode is obtained. Consequently, innumerable internal defects 8 are generated in the substrate 5, but O2 is hardly made contain in the grown layer 6, and no defect appears in the layer 6. Accordingly, the device of high reliability is obtained. |
