| 摘要 |
The invention relates to a depletion-type field-effect transistor on a semiconductor body. As high a channel resistance as possible is required to permit its use as a load element. According to the invention, this is achieved in a simple way in that the channel region is longitudinally divided in the source-drain direction so that at least a first subregion (9a, 9b) is present which has a conduction type opposite to the conduction type of the semiconductor body (1) and, next to it, a second subregion (9c) which is of the same conduction type as the semiconductor body (1). The field of application comprises flip-flop circuit load elements, in particular in semiconductor memories.
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