| 摘要 |
PURPOSE:To obtain an element without deterioration in the S/N ratio, by providing an element to a semiconductor layer having a thickness of <=40mum formed on an insulation substrate so as to prevent the generation of a minority carrier. CONSTITUTION:The solid-state image pickup element is provided to the semiconductor layer (P type layer) 11 having a thickness of <=40mum formed on the insulating substrate 12 made of sapphire or the like. The solid-state image pickup element is made up of, e.g., an N type diffusion layer 2 being a photoelectric conversion region, an imbedded channel N type diffusion layer 3, a channel stopper P type diffusion layer 4, a transfer gate 5, an electrode 6 of CCD charge transfer shift register, an insulation oxide film 7 and a light shield aluminum 8 and the like. The light passing through the semiconductor layer 11 has no generation of minority carrier. Thus, the solid-state image pickup element without deterioration in the S/N ratio is realized. |
