发明名称 |
Circuit for measuring low illumination intensities |
摘要 |
Illumination intensities of down to approximately 10<-3> lux can be measured with low outlay by connecting a junction field-effect transistor (JFET) in a source-follower circuit as light-sensitive element in a transistor circuit. The invention is suitable for measuring illumination intensities of between 10<-3> lux and 10 lux. <IMAGE>
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申请公布号 |
DE3235242(A1) |
申请公布日期 |
1984.03.29 |
申请号 |
DE19823235242 |
申请日期 |
1982.09.23 |
申请人 |
HEIMANN GMBH |
发明人 |
MEYER,JUERGEN,DR.RER.NAT.;HUSTER,HORST,ING. |
分类号 |
G01J1/44;(IPC1-7):G01J1/44;H01L31/10 |
主分类号 |
G01J1/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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