发明名称 Circuit for measuring low illumination intensities
摘要 Illumination intensities of down to approximately 10<-3> lux can be measured with low outlay by connecting a junction field-effect transistor (JFET) in a source-follower circuit as light-sensitive element in a transistor circuit. The invention is suitable for measuring illumination intensities of between 10<-3> lux and 10 lux. <IMAGE>
申请公布号 DE3235242(A1) 申请公布日期 1984.03.29
申请号 DE19823235242 申请日期 1982.09.23
申请人 HEIMANN GMBH 发明人 MEYER,JUERGEN,DR.RER.NAT.;HUSTER,HORST,ING.
分类号 G01J1/44;(IPC1-7):G01J1/44;H01L31/10 主分类号 G01J1/44
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