| 摘要 |
PURPOSE:To enable to detect radiation of low energy by forming one electrode on the surface of a conductive type region which is different from a substrate which is formed by implanting impurity ions through a window opened at an oxidized film covered on one surface of a semiconductor substrate and covering a fluorescent film on the surface of the oxidized film. CONSTITUTION:When the prescribed bias voltage is applied to a semiconductor radiation detector, a depletion layer 10 is formed, this layer 10 expands along the boundary between an oxidized film 2 at the periphery of a positive electrode 5 and a silicon, and when a light is emitted to the layer 10, electron-hole pairs are generated, and detected by an amplifier counter. In other words, when radiation 11-a is incident to the fluorescent film 7, it is partly absorbed by the fluorescent film to emit a fluorescent light 12, which is led to the layer 10 to detect it, and the radiation 11-b which is passed through the fluorescent film is arrived at the layer 10 and detected according to the normal detecting principle. The radiation 11-c which is passed through the electrode 5 and the N type diffused region 4 are, of course, detected by the layer 10. |
