| 摘要 |
PURPOSE:To prevent the degradation of photoelectric transducing efficiency due to light projection, by including Group V elements in an amorphous semiconductor layer, which generates electrons or a pair of holes that contribute to electricity generation. CONSTITUTION:Three p-i-n layers are deposited on a transparent electrode 2. A p layer 3p is made to be an amorphous SixC1-x by the glow discharge in an atmosphere, wherein B2H6 is added in SiH4+CH4. An i layer 3i is made to be amorphous Si:H from an atmosphere, wherein hydrogenated gas of Group V elements such as NH3 and PH3 is added in SiH4. An n layer 3n is made to be the amorphous Si:H by adding a large quantity of PH3 in SiH3. The amount to be included in the i layer 3i is recommended to be 0.5-3%. At this point, the decrease in photoelectric transducing efficiency with respect to the time of light projection becomes the minimum. When n type impurities such as P, As, and Sb are added, the film quality is degraded unless the amount is made far smaller than that of the layer 3n. Said amount should be 1/100 the amount of the layer 3n, and 1-50ppm is recommended. |
