| 摘要 |
PURPOSE:To make it possible to realize a liquid crystal TV, by laminating a light shield film on a negative type photoresist in an amorphous Si channel region, preventing the intrusion of light, suppressing the OFF current of each FET to about 10<-9>A, and arranging many FETs on a large transparent substrate. CONSTITUTION:A gate electrode G comprising two layers of Au and Cr is provided on a glass substrate 1 and connected to row electrodes X. External light to a channel is shielded. An SiO2 film 2 is deposited to the thickness of about 2,000-5,000Angstrom , and amorphous SiAs is selectively formed. Then source and drain electrodes S and D of Al are formed directly on the electrode G with a specified interval being provided. The electrode D is used as a part of a Y electrode. A display electrode by the ITO film 3 is formed so as to contact with the electrode S. Then a negative type resist 4 is selectively provided. Thereafter, the surface is coated by a positive type photoresist 6. A window is provided and covered by an Al film 5. A positive type photoresist 7 is provided at a channel part, the Al is removed, and a light shielding film is made to remain. In this constitution, the amorphous Si channel is shielded against the light, an OFF current is suppressed to 10<-9>A, the FET side is filled with liquid crystal, and the liquid crystal arrangement can be formed. |
