| 摘要 |
PURPOSE:To obtain grown layers, which do not vary, while continuously treating a large number of wafers by placing the wafer on a belt conveyor, moving the wafer in a reaction chamber and dropping a reaction gas on the wafer from two rows of mutually inverted spiral gas flow stators set up in the chamber. CONSTITUTION:Two rows of the mutually inverted spiral gas flow stators 2 are disposed in the reactor 1 made of slender quartz with an approximately oval section or a metal of such a shape, a blowing port 3 and a reflux port 4 for the reaction gas are connected at both end sections of the stators, and the gas is circulated between both ports by using a sirocco fan. The belt conveyor 8 made of ceramics is installed slidably on a sliding table 7 laid in the reactor 1, and the Si wafers 9 pasted on susceptors 10 are placed on the conveyor. The reaction gas from a bomb 13 is blown against the wafers 9 through the stators 2 while the wafers are heated by using a plurality of radiation heating modules set up to the upper section of the reactor 1. |
