| 摘要 |
PURPOSE:To prevent a breaking at a step of a wiring, and to improve moisture resistance by using SiO2 containing B and P as an inter-layer insulating film and flattening the insulating film through heat treatment at a specific temperature. CONSTITUTION:When B is made contain in PSG. the PSG is easy to be fluidized through heat treatment, and an Al corrosion also does not progress due to the intrusion of water. PSG in 5-10% wt. mol concentration of P is formed to the stepped difference section of a semiconductor, PSG in 4-8% wt. mol concentration of P is superposed, and <11>B<+> ions are implanted by 10<12>-10<16>ions/cm<2> and the wt. mol concentration of B is coated with 2-12% glass. Or the mixed glass of PSG and BSG is used, and the wt. mol concentration of P in PSG is brought to 4-8% and the wt. mol concentration of B in PSG to 2-12%. The laminate is flattened through treatment at 800-1,000 deg.C, and layers are insulated. |
