| 摘要 |
PURPOSE:To smooth the upper end of a window by heating PSG on the surface, to which the window is bored, while turning a semicoductor substrate at high speed. CONSTITUTION:A gate electrode 13 is formed on the oxide film 12 of the Si substrate 11, and the electrode is coated with the PSG 14 and the window 14 is bored. The Si substrate 9 is placed on a susceptor 8, and the substrate 9 is turned at high speed while irradiating laser beams 6. The PSG14 is heated and melted at that time, and the corner of the upper end A' of the window 14' is removed. Accordingly, no disconnection is generated on the window. |
