发明名称 Decoder circuit for selection lines of semiconductor memories
摘要 The invention relates to a decoder circuit which comprises a number of NOR decoder gates (G1). The latter can be selected via address lines (L1 ... L2n). The object is to attain a reduction in power consumption compared with conventional circuits of this type. This is achieved according to the invention by inserting a switching transistor (TS1) in the branch (2) of each NOR decoder gate (G1) to which the supply voltage is applied, which transistor is activated via an address line (L4) which is not used to activate the other switching transistors (T1 ... Tn) of the same gate (G1). No shunt current therefore occurs on around half of all unselected gates. The field of application includes integrated MOS logic circuits. <IMAGE>
申请公布号 DE3235662(A1) 申请公布日期 1984.03.29
申请号 DE19823235662 申请日期 1982.09.27
申请人 SIEMENS AG 发明人 HORNINGER,KARLHEINZ,DR.
分类号 G11C8/10;(IPC1-7):G11C7/00;G11C8/00 主分类号 G11C8/10
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