| 摘要 |
PURPOSE:To enable fining in a process in which a wiring or an element isolation region is manufactured on a foundation substrate, and to flatten a finished surface by providing a process in which a first thin-film is coated with a second thin-film, a process in which a groove is formed, a process in which the first thin-film and the foundation substrate are coated with a third thin-film and an etching process. CONSTITUTION:The first thin-film 2 is formed on the foundation substrate 1 such as a silicon-wafer, the second thin-film 3 in which internal stress concentrates to a stepped difference section is formed on the thin-film 2, and the groove 4 is formed to the foundation substrate 1 of the outside of the stepped difference section. The second thin-film 3 is removed. The third thin-film 5 consisting of silicon oxide as an element isolation material is formed on the whole surface through a sputtering method, etc., and a silicon oxide film remains only in the groove 4 through whole-surface isotropic etching. When removing the first thin-film 2, the element isolation region 6 with a flat surface can be formed. |
