发明名称 Electromagnetic radiation annealing of semiconductor material
摘要 A beam of electromagnetic radiation such as a pulsed laser beam is used to anneal materials, such as semiconductor materials, without the formation of puddles. Puddles are caused by raising the temperature of the material to its melting temperature by a laser beam. The beam of the pulsed laser can be scanned over the surface of the semiconductor material without raising the temperature to the melting temperature and with at least about 50% overlap of each irradiated surface portion whereby extensive surface areas can be annealed rapidly without puddling.
申请公布号 US4439245(A) 申请公布日期 1984.03.27
申请号 US19820342473 申请日期 1982.01.25
申请人 RCA CORPORATION 发明人 WU, CHUNG P.
分类号 H01L21/268;(IPC1-7):H01L21/26;B23K27/00 主分类号 H01L21/268
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