| 摘要 |
PURPOSE:To prevent a reaction between an Al wiring layer and a plasma CVD nitride film, and to form the multilayer wiring of high reliability easily without increasing the number of man-hours by baking the plasma CVD nitride film under vacuum when growing the nitride film is the inter-layer insulating film of the multilayer wiring. CONSTITUTION:An oxide film 202 is formed on a silicon semiconductor substrate 201, and a first layer Al wiring layer 203 is formed. When the plasma CVD nitride film 204 is formed on the Al wiring layer 303 through a plasma deposition method, the inside of a plasma CVD nitride film growing device is evacuated for ten - thirty min, and residual gases made contain in a vacuum baking (250-350 deg.C) Al layer are removed. The plasma CVD nitride film 204 is formed, and a through-hole 206 is bored and a second layer Al layer 205 is formed. |
