发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the erroneous operation of an integrated circuit and the like due to noise by a method wherein an insulative thin film is provided on the two electrodes which are formed in parallel with each other on the substrate and a wiring electrode is provided at the position where it overlaps with a part of the two electrodes on said insulative thin film, and a reference potential is given to one of the two electrodes. CONSTITUTION:Electrodes 7 and 8 are formed in the internal part of the substrate 3 in such a manner that the surface of the electrode is positioned within the same plane on the surface of the substrate 3, an insulative thin film 2 is formed on the electrodes 7 and 8 and the substrate 3, and a wiring electrode 1 is provided on the insulative thin film 2. Said wiring electrode 1, electrodes 7 and 8 are partially overlapped when viewed from above. Of the electrodes 7 and 8, the electrode 8 is formed equal to the reference potential. The electrodes 1, 7 and 8 constitute a transistor, electrostatic capacitance is present between the electrodes 1 and 7, and electrodes 1 and 8. A low-pass filter is formed by combining the electrostatic capacitance located between the wiring electrode s 7 and 8 and the internal resistor 4 of the wiring electrode 1, and the noise originated in amperage or voltage is reduced, thereby enabling to reduce the erroneous operation of the connected circuit 6.
申请公布号 JPS5952865(A) 申请公布日期 1984.03.27
申请号 JP19820163707 申请日期 1982.09.18
申请人 MITSUBISHI DENKI KK 发明人 MIYAJIMA HIROSHI;ZAIMOTO AKIYA
分类号 H01L27/04;H01L21/768;H01L21/822;H01L23/522;H01L29/78 主分类号 H01L27/04
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