| 摘要 |
PURPOSE:To improve the Schottky withstand voltage of the titled semiconductor device by a method wherein, after a resist for electron beam has been exposed by radiating electron beam corresponding to the gate width, an auxiliary exposure is performed from the end part on the drain side of the main exposure to the drain side, thereby enabling to reduce the series resistance between source electrodes. CONSTITUTION:The exposed part of a source electrode 4, a drain electrode 5 and a GaAs active layer 3 are covered, a positive type electron ray resist is covered using a spinner and the like, and a baking process is performed. Then, the first electrode beams 7 is selectively radiated on the electron beam resist 6 located almost in the center part between the source electrode 4 and the drain electrode 5, and a gate electrode pattern is exposed. Subsequently, the second exposure is performed on the region including the part closer to the side of the drain electrode 5 in such a manner that an electron beam 8 of the dosage less than that of the first exposure is scanned several times. Then, a developing process is performed on the resist 6 using MIBK and the like, and the aperture 9 corresponding to the exposure pattern by two electron beam exposures 7 and 8, and the aperture having a resist bottom part 9 are formed. Then, the GaAs active layer 3 is removed by etching using the resist 6 as a mask, and a recess 10 is formed on the GaAs active layer 3.
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