A wide band gap semiconductor alloy having a combination of P, In, Te, and Zn is formed by liquid phase epitaxy on an InP substrate. This alloy can be used for the formation of p-n junctions.
申请公布号
US4439399(A)
申请公布日期
1984.03.27
申请号
US19820375642
申请日期
1982.05.06
申请人
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE
