| 摘要 |
PURPOSE:To eliminate the need for complicate control, and to realize selective epitaxial growth simply by forming an insulator, the velocity of a decomposition and elimination reaction thereof at a temperature of a crystalline substrate for growth is large, as an isolation layer. CONSTITUTION:The substrate 8 is admitted into a quartz pipe 6 together with As2O3 7 entered into a platinum boat and sealed under vacuum, and brought into an oven 5, and an oxide film is grown. The oxide film of an element forming section is removed, all resists are removed, and the element section is purified, and washed by water and introduced instantaneously to a molecular-beam epitaxial growth device. A pure crystalline surface is obtained through heating cleaning at a substrate temperature of 600 deg.C under ultra-high vacuum, a substrate temperature is elevated up to 580 deg.C or more, Ga and As molecular beams of molecular beam intensity of 10<14>-10<15> atoms/cm<2>, sec are irradiated to the crystalline substrate, and a crystal is grown. Accordingly, GaAs does not adhere on the oxide film because As2O3 and Ga2O3 eliminate from the isolation layer 10 consisting of a GaAs oxide at large velocity, selective epitaxial growth 1 through which the surface is flattened is enabled, and errors are not generated and accuracy is improved. |
