| 摘要 |
PURPOSE:To enable to form a fine pattern by forming a groove surrounding the active region section of the semiconductor substrate, coating the side surface of a first thin-film coating the active region section and a section just under the thin-film with a third thin-film and forming an inter-element isolation region through thermal oxidation. CONSTITUTION:A first thin-film 12 is formed on the silicon semiconductor substrate 1, and first layer silicon nitride film 3 and underlay silicon oxide film 2 at a position where the isolation region is formed are removed. A polycrystalline silicon film 6 coating the whole surface of the substrate 1 and a molybdenum- silicide film 7 as a second thin-film 13 are formed. The U-shaped groove 8 is formed in the silicon semiconductor substrate 1 in the vicinity of a stepped difference section. The element isolation region is formed because a silicon oxide film 5 is formed selectively in the exposed region of the silicon semiconductor substrate 1 through thermal oxidation. The wall 10 of a remaining second layer silicon nitride film 9 and the first layer silicon nitride film 3 and underlay silicon oxide film 2 are removed in succession, and the surface of the silicon semiconductor substrate 1 is exposed. |
