| 摘要 |
PURPOSE:To remove the polyimide resin film of a projecting electrode section simply with high accuracy by applying a polyimide precursor on a semiconductor substrate with a projecting electrode in a rotatory manner, changing the precursor into a polyimide through heat treatment, applying a photo-resist in a rotatory manner and selectively etching the polyimide. CONSTITUTION:The semiconductor substrate 1 on which the projcting electrodes 2 made of a metal through a method such as plating is coated with the polyimide precursor 3 in approximately 5mum thickness through a rotatory application method. The precursor is changed into the polyimide through heat treatment for approximately 1hr at 250 deg.C in a nitrogen atmosphere, and the precursor is coated with the negative type photo-resist 4 in approximately 2mum thickness. There is no photo-resist on the projecting electrodes or the photo-resist is applied thinly in an extent that it does not function as a mask because the height of the projecting electrodes 2 is far higher than the thickness of the photo-resist 4 at that time. The surfaces are thermally treated for 1hr at 150 deg.C in a nitrogen atmosphere, and etched by an alakline solvent, etc. In this case, the polyimide on the projecting electrodes 2 is etched, and other sections are not etched. |
