| 摘要 |
PURPOSE:To ease a stress in thermal pressure welding process and improve reproducibility of product and yield by forming a metal film on the main surface of semiconductor substrate in such a side where is pressed by the other pressure depositing bar. CONSTITUTION:A metal film 17 is formed on the other main surface of the substrate 1 of flip-chip type GaAs FET chip 9 a thermal pressure welding is carried out by a pressure setting bar 16 through this metal film 17. Thereby, a partial stress during thermal pressure welding is eased and uniform pressure welding can be realized. |
