| 摘要 |
PURPOSE:To connect a silicon semiconductor and a transparent conductive film by an electrically low contact resistor by fast sticking the transparent conductive film through one surface of the silicon semiconductor and a metallic layer consisting of In and Sn or a mixture of In and Sn. CONSTITUTION:One surface of the silicon semiconductor 2 and the transparent conductive film 5 are fast stuck through the metallic layer 4 consisting of In and Sn or the mixture of In and Sn. For example, a contact opening section 4 is formed to an inter-layer insulating film 3 formed on the silicon semiconductor 2 on an insulating substrate 1, the metallic layer 4 in several nm is formed through a sputtering method while using an In metal containing 10% Sn as a target, and an ITO film 5 is formed at a substrate temperature of 200 deg.C in a 200nm thick film through the sputtering method, followed by patterning. |
