| 摘要 |
PURPOSE:To obtain the semiconductor element having excellent sensitivity to radiation of low energy and beams by utilizing a depletion layer expanding in a high-resistivity silicon substrate under a metallic oxide film. CONSTITUTION:The high resistivity silicon substrate 11 displaying a first conduction type, stopper layers 16 with the first conduction type diffused to the fringe of one main surface, and an electrode diffusion layer 14 with a second conduction type of polarity reverse to the first conduction type diffused to one part of one residual section of said layers except the stopper layers 16 sections are provided. The metallic oxide film 12 formed on one main surface of said substrate so as to coat approximately whole region of the main surface, one electrode 15 connected to said electrode diffusion layer 14 in a conductive manner while penetrating the metallic oxide film 12, and the other electrode 18 attached to the other main surface of said substrate 11 in a conductive manner are provided. |
