| 摘要 |
PURPOSE:To improve the performance of an SIT by making the depth of a junction of a gate region facing to a current path deeper than that in a contact region with a gate metallic electrode in the reverse conduction type gate region selectively formed from the surface of one conduction type impurity layer. CONSTITUTION:An N type epitaxial layer 10 is grown on an N type low resistivity substrate such as a substrate 9 in 0.005OMEGA.cm by 7mum in 3OMEGA-cm. Silicon nitride film patterns 16, 17 in 1,000Angstrom are formed selectively on the surface of the epitaxial layer 10, and a region as a source is coated with a photo-resist pattern 18 and boron ions are implanted in 100keV and 1X10<15>/cm<3>. Boron is diffused in an oxidizing atmosphere, and gate regions 11A, 11B are formed. When the whole is oxidized for 1.5hr at 1,000 deg.C in wet oxygen, an oxide film 15 in approximately 4,000Angstrom is formed, and gate diffusion-depth is approximately 1mum under nitride films 17, to which bird beaks do not reach, and approximately 1.2mum under the field oxide films 15. |
