| 摘要 |
PURPOSE:To prevent the formation of a deep impurity level, the resistance of an impurity thereof is increased, in light-emitting and light-receiving regions, and to obtain an arbitrary resistance value with excellent reproducibility by implanting the ions of the impurity, resistance thereof is increased, in a region, in which an electric circuit element is formed, and forming an epitaxial layer. CONSTITUTION:An N type Ga0.7Al0.3As layer 22 in 3mum thickness, an N type GaAs layer 23 in 0.2mum thickness and a P type Ga0.7Al0.3As layer 24 in 4mum thickness are formed to an N type GaAs substrate 21. A Si3N4 film 25 is formed through a PVD method as a mask for ion implantation, the Si3N4 film 25 in a desired region is removed, and oxygen ions 26 are implanted to form an implantation layer 27 Si3N4 Is removed, and an N type GaAs layer 29 in 0.4mum thickness is formed. An Si3N4 film 30 is formed through the PVD method, the Si3N4 film 30 in the desired region is removed, Zn is diffused up to the P type Ga0.7 Al0.3As layer 24 from an opening section, and a Zn diffusion layer 31 is formed. An opening section is formed to the Si3N4 film 30 by using a photo-resist film, and a mesa section 32 is formed through etching by a mixed liquid of sulfuric acid-hydrogen peroxide. |
