| 摘要 |
PURPOSE:To obtain the integrated circuit device with a memory cell containing a plurality of insulated gate field-effect transistors, signal propagation velocity thereof on address lines-bit lines is fast and areas thereof are small, by constituting bit lines by polycrystalline silicon or conductive wiring layers containing polycrystalline silicon. CONSTITUTION:In the so-called four transistor type MOS memory in which a memory cell consists of the four transistors Q1-Q4, the memory cell has the drive transistors Q1, Q2, in which gate electrodes are connected mutually to other drains, and the transistors Q3, Q4 transmitting signals from a pair of the bit lines 501, 502 over the drive transistors Q1, Q2, and the gate electrode 503 made of polycrystalline silicon of the transistors Q3, Q4 is conductance-coupled with an address line 504 made of aluminum. The bit lines 501, 502 represent wirings made of polycrystalline silicon, and the bit lines 501, 502 are each conductance-coupled with the transistors Q3, Q3' and Q4, Q4' of an adjacent memory cell by buried contacts 505, 506. |
