| 摘要 |
PURPOSE:To easily and accurately control a plating thickness of a thick plated electrode in order to improve productivity by executing the plating until an interval between plated metals on the pattern for monitoring plating thickness reaches the desired value. CONSTITUTION:The patterns 9-11 for monitoring thickness of plating consisting of two monitor films 8 opposed through the specified interval are formed on the surface of semiconductor substrate 1, where a flip-chip type field effect transistor is formed, by changing an interval of monitor films 8, during manufacture of field effect transistor, namely electrodes. Thereafter, plating is carried out until the plated metal 80 connects the opposed monitor films 8. In this case, the plat ing is completed when the plated metal 80 of the monitor pattern 10 isolated by the specific opposed distance comes to contact. Thereby, thickness of plating can be set very accurately. |
