| 摘要 |
PURPOSE:To improve the efficiency of discharge as well as to reduce power consumption and simultaneously aim at the promotion of energy-saving, by using a semiconductor for an electrode in a vacuum tube and likewise using a radioisotopic metal for this electrode. CONSTITUTION:Using a semiconductor including SiO2, or the like for an electrode, likewise, with a vacuum tube or the like using a radioisotopic metal for the electrode, when an N type semiconductor is used for a grid electrode G1 while a P type semiconductor is used for a grid electrode G2 in pentode three grid tubes (vacuum tubes) G1-G3, for example, a thermion out of a cathode advances toward a plate anode but it receives reaction of an electron on a G1N grid surface and then is attracted to a positive hole on a G2P grid surface whereby the thermion acts to advance toward the plate. In addition, when the radioisotopic metal is used for G1 and G2 in these pentode three grid tubes, the thermion out of the cathode is attracted into beta<+> radiation emitted out of G1 and further repulsed by beta<-> radiation emitted out of G2 so that it acts to advance toward the plate. |
