| 摘要 |
PURPOSE:To realize structure of an upper layer insulating film having no overhang at a semiconductor device having a multilayer insulating film of which the lower layer insulating film has the etching speed faster than the upper layer insulating film by a method wherein conductors for electrodes and a wiring are made to come in contact with the lower layer insulating film. CONSTITUTION:N type source.drain regions 12, 13 are provided in a P type semiconductor substrate 11, and a gate oxide film 14 is formed on the surface of the semiconductor substrate 11. The PSG layer 16 is adhered on the gate oxide film 14. For prevention of the SiO2 layer from generation of the overhang according to etching for formation of opening parts to be performed afterward, after the PSG layer 16 is adhered, a heat treatment is performed to make the layer 16 minutely. After then, the SiO2 layer 17 is adhered, and the etching speeds of the SiO2 layer 17 and the PSG layer 16 at wet-etching time are made to the same grade. Then etching is performed to form the opening parts using the mask of a photo resist. |
