| 发明名称 |
PROCESS FOR THE ETCHING OF CHROME |
| 摘要 |
Chromium is etched in a glow discharge without attack on Al/Cu, Si, SiO2, and Si3N4 layers by etching in a low pressure ambient atmosphere containing a polychlorinated organic compound such as CCl4, water, and a material selected from the group consisting of the noble gases and oxygen. |
| 申请公布号 |
DE2966686(D1) |
申请公布日期 |
1984.03.22 |
| 申请号 |
DE19792966686 |
申请日期 |
1979.11.27 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIU, GEORGE TEIN-CHU;KITCHER, JAMES ROBERT;OZOLS, GUNARS MIERVALDIS;ZINGERMAN, BRYANT NILS |
| 分类号 |
C23F4/00;H01L21/302;H01L21/3065;H01L21/308;H01L21/3213;(IPC1-7):H01L21/31;C23F1/00 |
主分类号 |
C23F4/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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