VAPOR GROWTH METHOD OF COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To maintain a growth rate constant and to grow a III-V group compound semiconductor crystal having a uniform compsn. in the stage of growing said crystal by a vapor growth method by providing projections in the bottom on the inside wall of a source boat for incorporating a III group element. CONSTITUTION:A substrate 3 to be grown with a III-V group compd. (for example, GaAs) is held in a holder 4 and is disposed in a reaction tube 1. An element of Group III (e.g.; Ga) is put in a source boat 12 having projections 16 in the bottom of the inside wall and is melted therein. Such boat is disposed in the tube 1. A compd. of an element of Group V (e.g.; AsCl3) and H2 are introduced into the vessel 1 and are heated to grow the crystal of the formed compd. of Group III-V on the substrate 3. Since there are the projections in the bottom, the molten element 15 of Group III contained in the boat 12 is prevented from being rounded by surface tension and always the specified surface area is maintained. The growth rate is consequently maintained constant.