| 摘要 |
PURPOSE:To prevent contamination due to other elements even if the same vapor deposition chamber is used for deposition of each layer of the photosensitive layers, and to enhance efficiency in use of equipment, by constituting all the 3 layers of the photosensitive layer using an Se-Te alloy. CONSTITUTION:The first layer 2 for receiving charge composed of 0.5-7wt% Te and the rest of Se is formed on a conductive substrate 1, on the layer 2 the second layer 3 for generating charge composed of 25-45wt% Te and the rest of Se is formed, and on the layer 3 the third layer 4 made of Se-Te alloy contg. 0.5-10wt% Te is formed. This layer 4 covers the second layer 3 having high Te content, prevents the layer 3 from abrasion and occurrence of change of sensitivity, and it has 0.1-3mum film thickness. |
