| 发明名称 |
Semiconductor laser diode |
| 摘要 |
An improvement to a semiconductor laser diode (10) according to DE-OS 2,865,507 by the use of at least one etching stop layer (125) in order to achieve further optimisation possibilities for the strip-shaped boundary of the laser-active zone (22). <IMAGE>
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| 申请公布号 |
DE3234389(A1) |
申请公布日期 |
1984.03.22 |
| 申请号 |
DE19823234389 |
申请日期 |
1982.09.16 |
| 申请人 |
SIEMENS AG |
发明人 |
AMANN,MARKUS-CHRISTIAN,DR.-ING.DIPL.-ING. |
| 分类号 |
H01L21/308;H01S5/00;H01S5/22;(IPC1-7):H01S3/18 |
主分类号 |
H01L21/308 |
| 代理机构 |
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| 地址 |
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